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IRF7726 Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD -94064 IRF7726 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Very Small SOIC Package Low Profile (< 1.2mm) Available in Tape & Reel VDSS -30V RDS(on) max 0.026@VGS = -10V 0.040@VGS = -4.5V ID -7.0A -6.

General Description

HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline.

Key Features

  • ations subject to change without notice. This product has been designed and qualified for the commercial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

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